A high-g overload protected accelerometer with a novel microstructure

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5641, Issue , 2004, Pages 82-86

  Chen, Weiping ^a   Wang, Wei ^b   Tian, Lei ^b   Liu, Xiaowei ^a   Huo, Mingxue ^a   Zhang, Ruichao ^a   Zhang, Deyin ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION   (China)

Author keywords

Accelerometer; FEM; Overload; Piezoresistor

Indexed keywords

COMPUTER SIMULATION; ELECTRODES; FINITE ELEMENT METHOD; INDUCTIVELY COUPLED PLASMA; MICROELECTROMECHANICAL DEVICES; MICROSENSORS; MICROSTRUCTURE; NATURAL FREQUENCIES; PLASMA ETCHING; SENSITIVITY ANALYSIS; SILICON;

CAVE; ELASTIC BEAMS; OVERLOAD; PIEZORESISTORS; SILICON LAYER;

ACCELEROMETERS;

EID: 20044386156     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.581191     Document Type: Conference Paper

References (3)

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3. Hidekuni Takao, Hirofumi Fukumoto, and Makoto Ishida.A CMOS Integrated Three-Axis Accelerometer Fabricated With Commercial Submicrometer CMOS Technology and Bulk-Micromachining. IEEE Transactions on Electron Devices, vol 48, no. 9, 2001.