Implications of nonparabolicity, warping, and inelastic phonon scattering on hole transport in pure Si and Ge within the effective mass framework

Journal of Applied Physics

Volumn 97, Issue 1, 2005, Pages

  Rodriguez Bolivar S ^a   Gomez Campos F M ^a   Gamiz F ^a   Carceller, J E ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN EQUATIONS; HOLE TRANSPORT; NONPARABOLICITY; PHONON SCATTERING;

ANISOTROPY; APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; GERMANIUM; MONTE CARLO METHODS; PHONONS;

SILICON;

EID: 19944430324     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1823025     Document Type: Article

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