Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 1, 2005, Pages 81-91

  Mukhopadhyay, Rajarshi ^a   Park, Yunseo ^a   Sen, Padmanava ^a   Srirattana, Nuttapong ^a   Lee, Jongsoo ^a   Lee, Chang Ho ^a   Nuttinck, Sebastien ^b   Joseph, Alvin ^c   Cressler, John D ^a   Laskar, Joy ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Active inductor; Active resistor; Distortion; Frequency agile; Quality (Q) factor; RF front end; Si CMOS; SiGe BiCMOS; Tunability; Tuning range; Voltage controlled oscillator (VCO)

Indexed keywords

CMOS INTEGRATED CIRCUITS; FREQUENCIES; FREQUENCY AGILITY; INDUCTANCE; MATHEMATICAL MODELS; RESISTORS; TUNING; VARIABLE FREQUENCY OSCILLATORS;

ACTIVE INDUCTOR; ACTIVE RESISTOR; DISTORTION; QUALITY (Q) FACTOR; RF FRONT-ENDS; SI CMOS; SIGEBICMOS; TUNABILITY; TUNING RANGE;

INTEGRATED CIRCUITS;

EID: 19944430261     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2004.839352     Document Type: Conference Paper

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