Study of alternating phase shift mask structure for 65nm node devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5256, Issue 2, 2003, Pages 880-888

  Konishi, Toshio ^a   Komizo, Toru ^a   Takahashi, Hiroyuki ^a   Morita, Motohiko ^a   Ohshima, Takashi ^a   Chiba, Kazuaki ^a   Kojima, Yosuke ^a   Sasaki, Jun ^a   Tanaka, Keishi ^a   Otaki, Masao ^a   Okuda, Yoshimitsu ^a  

^a TOPPAN PRINTING CO LTD   (Japan)

Author keywords

65nm technology node; AIMS fab193; Alternating phase shift mask; Lithography; Simulation; Structure; TEMPEST

Indexed keywords

CHROMIUM; COMPUTER SIMULATION; ELECTROMAGNETIC FIELDS; LIGHT SCATTERING; LIGHT TRANSMISSION; OPTICAL RESOLVING POWER; OPTIMIZATION; PHASE SHIFT; PHOTOLITHOGRAPHY;

65NM TECHNOLOGY NODES; AIMS FAB193; ALTERNATING PHASE-SHIFT MASKS; TEMPEST;

MASKS;

EID: 11144355373     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.522180     Document Type: Conference Paper

References (3)

1. Armen Kroyan and Hua-yu Liu, "Effects of Alternating Aperture PSM Design on Image Imbalance for 65nm Technology", Proc. of SPIE, Vol.4889, pp1217-1226 (2002)
2. Kei Mesuda, et al., "Optimization of Alt-PSM structure for 100nm-node ArF lithography (part-2)", Proc. of SPIE, Vol.4754, pp396-409 (2002)
3. Kazuaki Chiba, et al., "Optimization of ArF Alternating Phase-Shifting Mask Structure, for 100nm node, and Inspection of Phase Defects", Proc. of SPIE, Vol.4562, pp.430-440 (2002)