Hot-mesh CVD for growth of GaN films on (100) GaAs

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 116-119

  Yasui, Kanji ^a   Ishibashi, Mitsuyoshi ^a   Taima, Yoshiaki ^a   Akahane, Tadashi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Cubic GaN; GaAs substrates; Hot mesh CVD

Indexed keywords

AMMONIA; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; FREE RADICAL POLYMERIZATION; GALLIUM NITRIDE; LIGHT EMITTING DIODES; NITRIDES; NITRIDING; SUBSTRATES; THERMAL EFFECTS;

CUBIC GAN; GAAS SUBSTRATES; HOT-MESH CVD; SURFACE LAYERS;

THIN FILMS;

EID: 4544377146     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.067     Document Type: Article

References (5)

1. Okumura H., Misawa S., Yoshida S. Appl. Phys. Lett. 59:1991;1058.
2. Okumura H., Misawa S., Okahisa T., Yoshida S. J. Cryst. Growth. 136:1994;361.
3. Okumura H., Ohta K., Feuillet G., Balakrishman K., Chichibu S., Hamaguchi H., Hacke P., Yoshida S. J. Cryst. Growth. 178:1997;113.
4. K. Yasui, K. Morimoto, T. Akahane, Appl. Surf. Sci. 430 (2003) 178.
5. Yamawaki M., Ohara K., Morita D., Morimoto T., Umemoto H., Masuda A., Matsumura H. Ext. Abst.-Jpn. Soc. Appl. Phys. 2:2002;924. (in Japanese).