A new method for the analysis of high-resolution SILC data

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1483-1488

  Aresu, S ^b   De Ceuninck, W ^b   Knuyt, G ^a   Mertens, J ^b   Manca, J ^b   De Schepper, L ^a   Degraeve, R ^b   Kaczer, B ^b   D'Olieslaeger, M ^b   D'Haen, J ^b  

^a HASSELT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC POTENTIAL; ELECTRON TRAPS; GATES (TRANSISTOR); SILICA;

STRESS-INDUCED LEAKAGE CURRENT (SILC);

LEAKAGE CURRENTS;

EID: 0042694468     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00263-4     Document Type: Conference Paper

References (10)

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