High-resolution SILC measurements of thin SiO2 at ultra low voltages

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1485-1489

  Aresu, S ^b   De Ceuninck, W ^b   Dreesen, R ^c   Croes, K ^c   Andries, E ^a   Manca, J ^b   De Schepper, L ^a   Degraeve, R ^b   Kaczer, B ^b   D'Olieslaeger, M ^b   D'Haen, J ^b  

^a HASSELT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

^c XPEQT   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; EXTRAPOLATION;

DEGRADATION MECHANISM; HIGH RESOLUTION; HIGH-RESOLUTION MEASUREMENTS; HIGH-VOLTAGE MEASUREMENT; KINETICS OF DEGRADATION; OPERATING CONDITION; OPERATING VOLTAGE; ULTRA-LOW-VOLTAGE;

VOLTAGE MEASUREMENT;

EID: 0042969183     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(02)00175-0     Document Type: Conference Paper

References (8)

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2. 2 at Low Voltage". Symposium on VLSI techonology digest of Techinical papers, 2000.
3. J.H. Stathis, D.J. DiMaria, " Reliability progection for Ultra-Thin Oxides at low voltage" IEDM Tech. Dig., 1998 pp. 167-170.
4. In-situ method patented by the LUC and IMEC, No. PCT/EP90/00291, April 19, 1990.
5. T. Nigam, R. Degraeve, G. Groeseneken, M. M. Heyns, L. and H. E. Maes, "A fast and sample methodology for lifetime prediction of ultra-thin oxides" Proceedings IRPS 1999, pp. 381-388.
6. R. Degraeve, B. Kaczer and G. Groeseneken, "Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction", Microelectronics Reliability, Vol. 39, 1999, pp. 1445-1460. (Pubitemid 30524073)
7. L. Xie, K, R. Farmer and D. A. Buchanan, "Defect instability in ultra-thin Oxides on Silicon", Microelectronics Engineering, Vol. 36, 1997, pp. 25-28. (Pubitemid 127414733)
8. D. J. DiMaria, E. Cartier and D. Arnold, "Impact ionization, trap creation, degradation and breakdown in silicon dioxide films on silicon", J. Appl. Phys., Vol. 73, No. 7, 1993, pp. 3367-3384.