Structural and electrical properties of polycrystalline Bi 4-xNdxTi3O12 ferroelectric thin films with in-plane c-axis orientations

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 8-11, 2005, Pages

  Matsuda, Hirofumi ^a   Kurachi, Masahiro ^b   Uchida, Hiroshi ^b   Watanabe, Takayuki ^c,d   Iijima, Takashi ^a   Koda, Seiichiro ^b   Funakubo, Hiroshi ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SOPHIA UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Bismuth layer structured ferroelectric thin film; Chemical solution deposition; Ferroelectric property; Orientation control; Rare earth modification

Indexed keywords

ANISOTROPY; BISMUTH; BISMUTH COMPOUNDS; CHEMICAL MODIFICATION; DEPOSITION; IRIDIUM COMPOUNDS; POLYCRYSTALLINE MATERIALS; REMANENCE; SILICON; SOLUTIONS;

BISMUTH-LAYER-STRUCTURED FERROELECTRIC THIN FILMS; CHEMICAL SOLUTION DEPOSITION; FERROELECTRIC PROPERTIES; ORIENTATION CONTROL; RARE-EARTH MODIFICATION;

FERROELECTRIC THIN FILMS;

EID: 19944396838     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L292     Document Type: Article

References (19)

1. C. A. Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott and J. F. Scott: Nature 374 (1995) 627.
2. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee and W. Jo: Nature 401 (1999) 682.
3. J. F. Scott and C. A. Paz de Araujo: Science 246 (1989) 1400.
4. T. Watanabe, T. Kojima, T. Sakai, H. Funakubo, M. Osada, Y. Noguchi and M. Miyayama: J. Appl. Phys. 92 (2002) 1518.
5. T. Kojima, T. Sakai, T. Watanabe, H. Funakubo, K. Saito and M. Osada: Appl. Phys. Lett. 80 (2002) 2746.
6. H. Uchida, H. Yoshikawa, I. Okada, H. Matsuda, T. Iijima, T. Watanabe and H. Funakubo: Appl. Phys. Lett. 41 (2002) 2229.
7. H. Maiwa, N. Iizawa, D. Togawa, T. Hayashi, W. Sakamoto, M. Yamada and S. Hirano: Appl. Phys. Lett. 82 (2003) 1760.
8. T. Watanabe, T. Kojima, H. Uchida, I. Okada and H. Funakubo: Jpn. J. Appl. Phys. 43 (2004) L309.
9. S. E. Cummins and L. E. Cross: J. Appl. Phys. 39 (1968) 2268.
10. H. Irie, M. Miyayama and T. Kudo: J. Appl. Phys. 90 (2001) 4089.
11. H. N. Lee, D. Hesse, N. Zakharov and U. Goesele: Science 296 (2002) 2006.
12. T. Watanabe, H. Funakubo, K. Saito, T. Suzuki, M. Fujimoto, M. Osada, Y. Noguchi and M. Miyayama: Appl. Phys. Lett. 81 (2002) 1660.
13. H. Matsuda, S. Ito and T. Iijima: Appl. Phys. Lett. 83 (2003) 5023.
14. M. Takahashi, Y. Noguchi and M. Miyayama: Jpn. J. Appl. Phys. 41 (2002) 7053.
15. H. S. Shulman, M. Testrof, D. Damjanovic and N. Setter: J. Am. Ceram. Soc. 79 (1996) 3124.
16. K. Kato, D. Fu, K. Suzuki, K. Tanaka, K. Nishizawa and T. Miki: Appl. Phys. Lett. 84 (2004) 3771.
17. Y. Shimakawa, Y. Kubo, Y. Tauchi, H. Asano, T. Kamiyama, F. Izumi and Z. Hiroi: Appl. Phys. Lett. 79 (2001) 2791.
18. Y. Noguchi, M. Miyayama and T. Kudo: Phys. Rev. B 63 (2001) 214102.
19. T. Takenaka and K. Sakata: Ferroelectrics 38 (1981) 769.