Impact of Fowler-Nordheim and channel hot carrier stresses on MOSFETs with 2.2nm gate oxide

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 178-181

  Gerardin, S ^a,b   Cester, A ^a,b   Paccagnella, A ^a,b   Ghidini, G ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b INFM   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Matching; MOSFET; Reliability

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; ELECTRIC POTENTIAL; ELECTRON TUNNELING; HOT CARRIERS; MOS DEVICES; RELIABILITY; STRESS ANALYSIS;

ELECTRICAL STRESS; GATE OXIDE; HOT CARRIER STRESS; MATCHING;

MOSFET DEVICES;

EID: 19944378456     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.064     Document Type: Conference Paper

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