Maintaining lithographic quality during OPC for low k1 and MEEF processes constrained by mask dimensional rules

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5567, Issue PART 2, 2004, Pages 1161-1167

  Cork, Christopher ^a   Melvin III, Lawrence S ^a   Miller, Mike ^a   Lugg, Robert ^a   Rieger, Michael L ^a  

^a SYNOPSYS INC   (United States)

Author keywords

Mask Rule Check; MRC; OPC

Indexed keywords

LITHOGRAPHIC QUALITY; MASK RULE CHECKS (MRC); OPTICAL PROXIMITY CORRECTION (OPC); RESOLUTION ENHANCEMENTS TECHNIQUES (RET);

ALGORITHMS; COMPUTER SIMULATION; CONSTRAINT THEORY; DEGREES OF FREEDOM (MECHANICS); ERROR ANALYSIS; LITHOGRAPHY; OPTIMIZATION; PHASE SHIFT; SILICON;

MASKS;

EID: 19844373508     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.568550     Document Type: Conference Paper

References (3)

1. Christopher M Cork et al. "Mathematically describing the target contour in silicon such that model-based OPC can best realize design intent." Design and Process Integration for Microelectronic Manufacturing II. SPIE Proceedings 2004 Vol. 5379
2. Martin C Keck et al. "Mask manufacturing rule check: how to save money in your mask shop." 20th Annual BACUS Symposium on Photomask Technology SPIE Proceedings 2001 Vol. 4186
3. Eric C Lynn, Shih Ying Chen. "Life is better without non-orthogonal or non-45-deg. edges: a practical solution to alleviate the pain on OPC and mask writing." Photomask and Next-Generation Lithography Mask Technology IX 2002 SPIE Proceedings Vol. 4754.