Two-level model and magnetic field effects on the hysteresis in n-GaAs

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 8, 2004, Pages

  Tzeng, Shwu Yun Tsay ^a   Tzeng, Yiharn ^b  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM;

ARTICLE; DYNAMICS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; ENERGY BALANCE; HYSTERESIS; IONIZATION; MAGNETIC FIELD; MAGNETISM; MODEL; SEMICONDUCTOR; TEMPERATURE DEPENDENCE;

EID: 19544383395     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.085208     Document Type: Article

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