Direct experimental observation of the Hall angle in the low-temperature breakdown regime

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 19, 1998, Pages 13099-13102

  Novak V ^a   Hirschinger, J ^b   Niedernostheide, F ^b   Prettl, W ^b  

^a INSTITUTE OF MATHEMATICS   (Czech Republic)

^b UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005076825     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.13099     Document Type: Article

References (14)

1. E. Schöll, Nonequilibrium Phase Transitions in Semiconductors (Springer, New York, 1987).
2. V. Novák, J. Hirschinger, W. Prettl, and F.-J. Niedernostheide, Semicond. Sci. Technol.13, 756 (1998).
3. W. Eberle, J. Hirschinger, U. Margull, W. Prettl, V. Novák, and H. Kostial, Appl. Phys. Lett. 68, 3329 (1996).
4. J. Hirschinger, W. Eberle, W. Prettl, F.-J. Niedernostheide, and H. Kostial, Phys. Lett. A 236, 249 (1997).
5. A. C. Beer, Galvanomagnetic Effects in Semiconductors (Academic, New York, 1963).
6. K. Seeger, Semiconductor Physics, 6th ed. (Springer, Berlin, 1997).
7. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors (Springer, Berlin, 1996).
8. R. S. Allgaier, Semicond. Sci. Technol. 3, 306 (1988).
9. G. E. Stillman, in Handbook on Semiconductors, edited by T. S. Moss and S. Mahajan (Elsevier, Amsterdam, 1994).
10. J. Hirschinger, F.-J. Niedernostheide, W. Prettl, V. Novák, and H. Kostial, Phys. Status Solidi B 204, 477 (1997).
11. O. A. Ryabushkin and V. A. Bader (unpublished).
12. F. Karel, J. Oswald, J. Pastrňák, and O. Petříček, Semicond. Sci. Technol. 7, 203 (1992).
13. H. Kostial, M. Asche, R. Hey, K. Ploog, B. Kehrer, W. Quade, and E. Schöll, Semicond. Sci. Technol. 10, 775 (1995).
14. E. H. C. Parker, The Technology and Physics of Molecular Beam Epitaxy (Plenum, New York, 1985).