An integrated wet chemical etch-strip-clean sequence

Solid State Technology

Volumn 43, Issue 10, 2000, Pages 146-152

  Coze, Arnaud ^a   Philit, Gaëlle ^a   Le Tiec, Yannick ^b   Rigaudière, Joël ^b   Butterbaugh, Jeffery W ^c  

^a ATMEL   (France)

^b Metron Technology   (France)

^c FSI International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 19444365148     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (8)

1. Y. Kunii, S. Nakayama, M. Maeda, "Wet Etching of Doped and Nondoped Silicon Oxide Films Using Buffered Hydrogen Fluoride Solutions," J. Electrochem. Soc., Vol. 142, No. 10, p. 3510, 1995.
2. 2 Films in Aqueous 0.49% HF," J. Electrochem. Soc., Vol. 143, No. 9, p. 2885, 1996.
3. 2 in Hydrofluoric Acid," J. Electrochem. Soc., Vol. 141, No. 10, p. 2852, 1994.
4. 2 in Buffered Oxide Etch," J. Electrochem. Soc., Vol. 139, No. 2, p. 521, 1992.
5. 2 Etching in HF Solutions," J. Electrochem. Soc., "Solid-state Science and Technology" special issue, p. 708, 1983.
6. IUPAC, Part A, Pergamon Press, Oxford, p. 188, 1982.
7. Y. Le Tiec, J. Rigaudière, C. Pizzetti, Proc. 6th Int'l. Symp. on Cleaning Technology in Semiconductor Device Mfg., Vol. 99-36, p. 277, 2000.
8. S. Verhaverbeke, "Buffered HF at Point of Use," Proc. 44th Ann. Meeting of the Institute of Environmental Sciences and Technology, p. 278, 1998.