Some Illumination on the Mechanism of SiO2 Etching in HF Solutions

Journal of the Electrochemical Society

Volumn 130, Issue 3, 1983, Pages 708-712

  Nielsen, Henry ^a   Hackleman, David ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

glass; integrated circuits; kinetics; photoelectricity

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE;

SILICA;

EID: 0020722156     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2119787     Document Type: Article

References (6)

1. G. Parisi, S. Haszko, and G. Rozgonyi, This Journal, 124, 917 (1977).
2. W. Kern, in “Proc. Symp. Etching for Pattern Definitions,” H. G. Hughes and M. J. Rand, Editors, pp. 1–18, The Electrochemical Society, Princeton, NJ (1976).
3. F. Schwettman, R. Dexter, and D. Cole, This Journal, 120, 1566 (1973).
4. 200:80:1 by volume, Reagent grade HOAc: HNO3: HF.
5. J. Judge, in “Proc. Symp. Etching for Pattern Definitions,” H. G. Hughes and M. J. Rand, Editors, pp. 19-36, The Electrochemical Society, Princeton, NJ (1976).
6. R. West, M. Fink, and J. Michl, Science, 214, 1343 (1981).