Effects of oriented growth on properties of Ag/Bi4Ti 3O12/p-Si heterostructure prepared by Sol-Gel method with rapid thermal annealing techniques

Journal of Materials Science: Materials in Electronics

Volumn 16, Issue 4, 2005, Pages 209-213

  Wang, H ^a   Ren, M F ^a  

^a GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CURRENT DENSITY; FERROELECTRICITY; POLARIZATION; RAPID THERMAL ANNEALING; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILVER; THERMAL EFFECTS;

ANNEALING TEMPERATURE; ORIENTED GROWTH; POLARIZATION-VOLTAGE CURVES; REMANENT POLARIZATION; SOL-GEL METHOD;

HETEROJUNCTIONS;

EID: 19444362092     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10854-005-0767-0     Document Type: Article

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