Characteristics of Pb(Zr0.52Ti0.48)O3 thin films on p-Si with a buffer layer of Bi4Ti3O12 prepared by pulsed laser deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1388-1390

  Wang, Hua ^a,b   Yu, Jun ^a   Dong, Xiaomin ^a   Zhou, Wenli ^a   Wang, Yunbo ^a   Zheng, Yuankai ^a   Zhao, Jianhong ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY   (China)

Author keywords

Bi4Ti3O12; Buffer layer; Ferroelctric films; Pb(Zr0.52 Ti0.48)O3; Pulsed laser deposition

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; POLARIZATION; PULSED LASER DEPOSITION; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

BUFFER LAYERS;

FERROELECTRIC THIN FILMS;

EID: 0035270603     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1388     Document Type: Article

References (9)