A Hall coefficient investigation of ferromagnetic Ga1-xMn xAs layers on (100) GaAs substrates

Solid State Communications

Volumn 130, Issue 9, 2004, Pages 627-630

  Yoon, I T ^a   Kang, T W ^a   Kim, K H ^b   Kim, D J ^b  

^a Dongguk University   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

A. DMS; A. GaMnAs; D. Curie temperature; D. Spintronics

Indexed keywords

FERROMAGNETIC MATERIALS; HALL EFFECT; HOLE MOBILITY; INSULATING MATERIALS; IONS; MAGNETIC SUSCEPTIBILITY; MOLECULAR BEAM EPITAXY; PARAMAGNETISM; SUBSTRATES; TEMPERATURE DISTRIBUTION;

CURIE TEMPERATURE; DILUTED MAGNETIC SEMICONDUCTORS (DMS); GAMNAS; SPINTRONICS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1942535786     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.02.054     Document Type: Article

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