GaN and AlxGa1-xN p-i-n High-Voltage Rectifiers Grown by Metalorganic Chemical Vapor Deposition

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 301-305

  Zhu, T G ^a   Chowdhury, U ^a   Wong, M M ^a   Kim, K S ^a   Denyszyn, J C ^a   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1942424977     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<301::AID-PSSA301>3.0.CO;2-G     Document Type: Article

References (5)

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2. T. G. ZHU, D. J. H. LAMBERT, B. S. SHELTON, M. M. WONG, U. CHOWDHURY, and R. D. DUPUIS, Appl. Phys. Lett. 77, 2918 (2000).
3. T. G. ZHU, D. J. H. LAMBERT, B. S. SHELTON, M. M. WONG, U. CHOWDHURY, H. K. KWON, and R. D. DUPUIS, Electron. Lett. 36, 1971 (2000).
4. V. KHEMKA, R. PATEL, T. P. CHOW, and R. J. GUTMANN, Solid State Electron. 43, 1945 (1999).
5. S. J. PEARTON, R. J. SHUL, and F. REN, MRS Internet J. Nitride Semicond. Res. 5, 11 (2000).