TEM study of slip lines in power MOS devices

Journal of Physics Condensed Matter

Volumn 12, Issue 49, 2000, Pages 10279-10286

  Riviere Jerome A ^a   Levade, C ^a   Vanderschaeve, G ^a   Percheron Garcon I ^b   Forgerit, B ^b  

^a CEMES CNRS   (France)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CRYSTAL DEFECTS; ETCHING; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

SLIP LINES;

MOS DEVICES;

EID: 0141519293     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/49/329     Document Type: Article

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