Generation of dislocation glide loops in Czochralski silicon

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 12981-12987

  Giannattasio, A ^a   Senkader, S ^a   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BENDING STRENGTH; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); ETCHING; OXIDES; PRECIPITATION (CHEMICAL); SHEAR STRESS;

CRITICAL STRESSES; CZOCHRALSKI SILICON; DISLOCATION GLIDE LOOPS; PUNCHED OUT PRISMATIC LOOPS;

SEMICONDUCTING SILICON;

EID: 0037122143     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/341     Document Type: Article

References (10)

1. Leroy B and Plougonven C 1980 J. Electrochem. Soc. 127 961
2. Yonenaga I and Sumino K 1982 Japan. J. Appl. Phys. 21 47
3. Sumino K 1994 Handbook on Semiconductors vol 3, ed S Mahayan (Amsterdam: Elsevier) ch 2
4. Sumino K and Yonenaga I 1994 Semicond. Semimet. 42 449
5. Mariani J L, Pichaud B, Minari F and Martinuzzi S 1992 J. Appl. Phys. 71 1284
6. Sueoka K, Akatsuka M, Katahama H and Adachi N 1997 Japan. J. Appl. Phys. 36 7095
7. Jurkschat K, Senkader S, Wilshaw P R, Gambaro D and Falster R J 2001 J. Appl. Phys. 90 3219
8. Tan T Y and Tice W K 1976 Phil. Mag. 34 615
9. Yasutake K, Umeno M and Kawabe H 1982 Phys. Status Solidi a 69 333
10. Hirth J P and Lothe J 1968 Theory of Dislocations (New York: McGraw-Hill)