Dose rate and SDD dependence of commercially available diode detectors

Medical Physics

Volumn 31, Issue 4, 2004, Pages 914-924

  Saini, Amarjit S ^a   Zhu, Timothy C ^b  

^a H LEE MOFFITT CANCER CENTER AND RESEARCH INSTITUTE   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

Diode; Diode dosimetry; Dose rate dependence; In vivo dosimetry; SSD or SDD dependence

Indexed keywords

DOSIMETRY; GOLD;

CONTINUOUS RADIATION; CORRECTION FACTORS; DOSE RATE DEPENDENCE; ELECTRON CONTAMINATION; EMPIRICAL FORMULAS; IN-VIVO; SOURCE-TO-DETECTORS; SSD OR SDD DEPENDENCE;

DIODES;

ACCURACY; ARTICLE; DIODE; DOSIMETER; DOSIMETRY; ENERGY TRANSFER; PHANTOM; PRIORITY JOURNAL;

EID: 1942420364     PISSN: 00942405     EISSN: None     Source Type: Journal    
DOI: 10.1118/1.1650563     Document Type: Article

References (18)

1. G. Rikner and E. Grusell, "General specifications for silicon semiconductors for use in radiation dosimetry," Phys. Med. Biol. 32, 1109-1117 (1987).
2. G. Rikner and E. Grusell, "Effects of radiation damage on p-type silicon detectors," Phys. Med. Biol. 28, 1261-1267 (1983).
3. G. Rikner, "Silicon diode as detectors in relative dosimetry of photon, electron, and proton radiation fields," Ph.D. thesis, Uppsala University, Sweden (1983).
4. A. S. Saini and T. C. Zhu, "Temperature dependence of commercially available diode detectors," Med. Phys. 29, 622-630 (2002).
5. E. Grusell and G. Rikner, "Evaluation of temperature effects in p-type silicon detectors," Phys. Med. Biol. 31, 527-534 (1986).
6. E. Grusell and G. Rikner, "Linearity with dose rate of low resistivity p-type silicon semiconductor detectors," Phys. Med. Biol. 38, 785-792 (1993).
7. J. Van Dam, G. Leunens, and A. Dutreix, "Correlation between temperature and dose-rate dependence of semiconductor response; influence of accumulated dose," Radiother. Oncol. 19, 345-351 (1990).
8. E. Grusell and G. Rikner, "Radiation damage induced dose rate nonlinearity in an n-type silicon detector," Acta Radiol.: Oncol. 23, 465-469 (1984).
9. J. Shi, W. E. Simon, and T. C. Zhu, "Modeling the instantaneous dose-rate dependence of radiation diode detector" Med. Phys. 30, 2509-2519 (2003).
10. D. Wilkins, X. A. Li, and L. Greig, "The effect of dose-rate dependence of p-type silicon detector on linac relative dosimetry," Med. Phys. 24, 879-881 (1997).
11. P. A. Jursinic, "Implementation of an in-vivo diode dosimetry program and changes in diode characteristics over a 4-year clinical history," Med. Phys. 28, 1718-1726 (2001).
12. F. H. Attix, "Introduction to radiological physics and radiation dosimetry," (Wiley, New York, 1986).
13. T. C. Zhu, B. E. Bjärngard, Y. Xiao, and C. J. Yang, "Modeling the output ratio in air for Megavoltage photon beams," Med. Phys. 28, 925-937 (2001).
14. X. R. Zhu, "Entrance dose measurements for in-vivo diode dosimetry: Comparison of correction factors for two types of commercial silicon diode detectors," J. Appl. Clin. Med. Phys. 1, 100-107 (2000).
15. D. Georg, B. Ost, M. Hoornaert, P. Pilette, J. Van Dam, M. Van Dyke, and D. Huyskens, "Buildup modification of commercial diodes for entrance dose measurements in 'higher energy' photon beams," Radiother. Oncol. 51, 249-256 (1999).
16. R. Sjogren and M. Karlsson, "Influence of electron contamination on in-vivo surface dosimetry for high-energy photon beams," Med. Phys. 25(9), 916-921 (1998).
17. G. Rikner and E. Grusell, "Correction factors in in-vivo dosimetry, with reference to entrance dose measurements," Radiother. Oncol. 37, S19 (1995).
18. V. Colussi, A. Beddar, T. Kinsella, and C. Sibata, "In-vivo dosimetry using a single diode for megavoltage photon beam radiotherapy: Implementation and response characterization," J. Appl. Clin. Med. Phys. 2, 210-218 (2001).