The effect of dose rate dependence of p-type silicon detectors on linac relative dosimetry

Medical Physics

Volumn 24, Issue 6, 1997, Pages 879-882

  Wilkins, David ^a   Li, X Allen ^a   Cygler, Joanna ^a   Gerig, Lee ^a  

^a OTTAWA REGIONAL CANCER CENTRE   (Canada)

Author keywords

Diode detectors; Dose rate nonlinearity; Linac depth dose

Indexed keywords

DIODES; LINEAR ACCELERATORS; PARTICLE BEAMS; PHOTOIONIZATION; PHOTONS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SILICON DETECTORS;

DEPTH DOSE; DIODE DETECTORS; DOSE RATE; DOSE RATE DEPENDENCE; HIGH RESISTIVITY; HIGH-ENERGY PHOTON BEAMS; PHOTON DETECTOR; SILICON DIODE DETECTORS;

POWER SEMICONDUCTOR DIODES;

ARTICLE; DOSE CALCULATION; DOSIMETRY; IONIZATION CHAMBER; PRIORITY JOURNAL; RADIATION DEPTH DOSE; RADIATION DOSE;

EID: 0030940762     PISSN: 00942405     EISSN: None     Source Type: Journal    
DOI: 10.1118/1.597985     Document Type: Article

References (8)

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