The peculiarities of InAs/GaAs quantum dot formation by MOVPE in presence of CCl4

Izvestiya Akademii Nauk. Ser. Fizicheskaya

Volumn 67, Issue 2, 2003, Pages 208-210

  Bajdus, N V ^a   Biryukov, A A ^a   Danilov, Yu A ^a   Zvonkov, B N ^a   Zdorovejshchev, A V ^a   Mokeeva, P B ^a   Nekorkin, S M ^a   Uskova, E A ^a  

^a NONE

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EID: 0037260520     PISSN: 03676765     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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