Effect of surface modification on the properties of hydrogen-sensitive GaAs-based Schottky diodes

Technical Physics

Volumn 48, Issue 5, 2003, Pages 592-597

  Tikhov, S V ^a   Shobolov, E L ^a   Levichev, S B ^a   Baidus, N V ^a  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037503076     PISSN: 10637842     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1576473     Document Type: Article

References (16)

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