A comparative study of EL2 and other deep centers in undoped SI GaAs using optical absorption spectra and photoconductivity measurements

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 512, Issue 1-2, 2003, Pages 1-7

  Kozlova, J P ^a   Bowles, T J ^b   Eremin, V K ^c   Gavrin, V N ^a   Koshelev, O G ^d   Markov, A V ^e   Morozova, V A ^d   Polyakov, A J ^e   Verbitskaya, E M ^c   Veretenkin, E P ^a  

^a INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

^d MOSCOW STATE UNIVERSITY   (Russian Federation)

^e INSTITUTE OF RARE METALS   (Russian Federation)

Author keywords

Deep levels; Gallium arsenide; Optical absorption; Radiation detector

Indexed keywords

ABSORPTION SPECTROSCOPY; DOPING (ADDITIVES); GALLIUM COMPOUNDS; LIGHT ABSORPTION; PHOTOCONDUCTIVITY;

DEEP CENTERS;

RADIATION DETECTORS;

EID: 19244384330     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01871-0     Document Type: Conference Paper

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