Study of GaAs as a material for solar neutrino detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 439, Issue 2, 2000, Pages 651-661

  Markov, A V ^a   Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Eremin, V K ^b   Verbitskaya, E M ^b   Gavrin, V N ^c   Kozlova, Y P ^c   Veretenkin, Y P ^c   Bowles, T J ^d  

^a Institute of Chemical Problems for Microelectronics   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; CRYSTAL GROWTH FROM MELT; ELECTRON TRAPS; FERMI LEVEL; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR COUNTERS; SEMICONDUCTOR GROWTH;

SOLAR NEUTRINO DETECTORS;

COSMIC RAY DETECTORS;

EID: 0033898053     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00849-9     Document Type: Article

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