Comparison of VO2 thin films prepared by inorganic sol-gel and IBED methods

Applied Physics A: Materials Science and Processing

Volumn 78, Issue 5, 2004, Pages 777-780

  Ningyi, Y ^a   Jinhua, L ^a,c   Chan, H L W ^b   Chenglu, L ^c  

^a CHANGZHOU UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^c SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BOLOMETERS; DEPOSITION; ELECTRIC RESISTANCE; HEATING; HYDROPHILICITY; ION BEAMS; OPTICAL SWITCHES; PHASE TRANSITIONS; SOL-GELS; VANADIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

BOLOMETRIC DETECTORS; ION BEAM ENHANCED DEPOSITION (IBED); SEMICONDUCTOR TO METAL PHASE TRANSITION; TEMPERATURE COEFFICIENT OF RESISTANCE (TCR);

THIN FILMS;

EID: 18844451199     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-002-2057-5     Document Type: Article

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