Time evolution of ion energy distributions for plasma doping

IEEE Transactions on Plasma Science

Volumn 33, Issue 2 I, 2005, Pages 252-253

  Agarwal, Ankur ^a   Kushner, Mark J ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b Iowa State University of Science and Technology   (United States)

Author keywords

Ion implantation; Modeling; Plasma; Pulsed

Indexed keywords

ION IMPLANTATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PLASMAS; SEMICONDUCTOR JUNCTIONS;

ION ENERGY AND ANGULAR DISTRIBUTION; PLASMA DOPING; ULTRA SHALLOW JUNCTIONS;

SEMICONDUCTOR DOPING;

EID: 18844390737     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2005.845887     Document Type: Article

References (6)

1. P. K. Chu, S. Qin, C. Chan, N. W. Cheung, and L. A. Larson, "Plasma immersion ion implantation a fledgling technique for semiconductor processing," Mat. Sci Eng., vol. R17 pp. 207-280, 1996.
2. S. B. Felch, Z. Fang, B.-W. Koo, R. B. Liebert, S. R. Walther, and D. Hacker, "Plasma doping for the fabrication of ultra-shallow junctions," Surf. Coatings Technol., vol. 156, pp. 229-236, 2002.
3. A. Sankaran and M. J. Kushner, "Integrated feature scale modeling of plasma processing of porous and solid SiO2. I. Fluorcarbon etching," J. Vac. Sci. Technol. A, vol. 22, pp. 1242-1259, 2004.
4. R. Kinder and M. J. Kushner, "Non-collisional heating and electron energy distributions in magnetically enhanced inductively coupled and helicon plasma sources," J. Appl. Phys., vol. 90, pp. 3699-3712, 2001.
5. Amtec Engineering., Bellevue, WA. [Online]. Available: http://www.amtec. com
6. Adobe Corporation., San Jose, CA. [Online]. Available: http://www.adobe. com