High-Sensitivity Ion Beam Analytical Method for Studying Ion-Implanted SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 625-628

  Battistig, G ^a   Garcia Lopez, J ^b   Khanh, N Q ^a   Morilla, Y ^b   Respaldiza, M A ^b   Szilagyi E ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b CENTRO NACIONAL DE ACELERADORES   (Spain)

^c WIGNER RESEARCH CENTRE FOR PHYSICS   (Hungary)

Author keywords

Backscattering Spectrometry; Channeling; Ion Implantation; Silicon Carbide

Indexed keywords

ANNEALING; ION BEAMS; ION IMPLANTATION; RESONANCE; SPECTROMETRY;

BACKSCATTERING SPECTROMETRY;

SILICON CARBIDE;

EID: 18744437780     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.625     Document Type: Conference Paper

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