Gold-hydrogen complexes in silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 58, Issue 1, 1999, Pages 126-129

  Rubaldo, L ^a   Deixler, P ^b   Hawkins, I D ^b   Terry, J ^b   Maude, O K ^a   Portal, J C ^a   Evans Freeman, J H ^a   Dobaczewski, L ^c   Peaker, A R ^a,b  

^a GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ABSORPTION; ELECTRON EMISSION; GOLD; HYDROGEN; TRANSITION METALS;

LAPLACE DEEP LEVEL TRANSIENT SPECTROSCOPY (LDLTS);

SEMICONDUCTING SILICON;

EID: 0344210378     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00278-5     Document Type: Article

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