Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl2 plasma etching

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 112-115

  Rizvi, S A ^a   Maguire, P D ^a   Mahony, C M O ^a   Okpalugo, O A ^a   Corr, C S ^b   Graham, W G ^b   Morley, S M ^a  

^a UNIVERSITY OF ULSTER   (United Kingdom)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDUCTIVELY COUPLED PLASMA; IONS; LANGMUIR PROBES; LIGHT EMISSION; NITRIDES; OPTICAL CORRELATION; OPTICAL EMISSION SPECTROSCOPY; PLASMA ETCHING; WIDE BAND GAP SEMICONDUCTORS;

ATOMIC CHLORINE; ETCH MECHANISM; ETCH RATES; INDUCTIVELY-COUPLED; ION FLUXES; LANGMUIR PROBE MEASUREMENTS; OPTICAL EMISSIONS; PLASMA CHARACTERISTICS;

CHLORINE COMPOUNDS;

EID: 18744416226     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390002     Document Type: Conference Paper

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