SiGe δ-channel field-effect transistors on SIMOX substrates

Semiconductor Science and Technology

Volumn 20, Issue 6, 2005, Pages 559-562

  Wu, San Lein ^a  

^a CHENG SHIU UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; HOLE MOBILITY; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON ON INSULATOR TECHNOLOGY;

COULOMB SCATTERING; DOPING DENSITY; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); TUNNELLING CURRENT DENSITIES;

FIELD EFFECT TRANSISTORS;

EID: 18744411241     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/6/014     Document Type: Article

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