Optimization of the silicon oxide layer thicknesses inserted in the Mo/Si multilayer interfaces for high heat stability and high reflectivity

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 4952-4958

  Ishino, M ^a   Yoda, O ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT STABILITY; HIGH REFLECTIVITY; MO/SI MULTILAYER; SILICON OXIDE LAYERS; SOFT-X-RAY REFLECTIVITY;

OPTIMIZATION; SILICON; SILICON OXIDES; X RAYS;

MULTILAYERS;

EID: 18744399594     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510566     Document Type: Article

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