Proton radiation damage in P-channel CCDs fabricated on high-resistivity silicon

IEEE Nuclear Science Symposium and Medical Imaging Conference

Volumn 1, Issue , 2001, Pages 72-75

  Bebek, C ^a   Groom, D ^a   Holland, S ^a   Karcher, A ^a   Kolbe, W ^a   Lee, J ^a   Levi, M ^a   Palaio, N ^a   Turko, B ^a   Uslenghi, M ^a   Wagner, M ^a   Wang, G ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

CCD; High resistivity silicon; Radiation damage

Indexed keywords

CHARGE CARRIERS; DOSIMETRY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; RADIATION DAMAGE; RADIATION DETECTORS; SEMICONDUCTING SILICON;

CHARGE TRANSFER EFFICIENCY; DARK CURRENT; PROTON RADIATION DAMAGE;

CHARGE COUPLED DEVICES;

EID: 0035554607     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. A 200 × 200 CCD image sensor fabricated on high-resistivity silicon
2. Notch and large area CCD imagers
3. Radiation damage in scientific charge-coupled devices
4. The effects of nuclear radiation on P-channel CCD imagers
5. Proton damage effects on P-channel CCDs
6. Radiation damage in silicon detectors for high-energy physics experiments
7. The effects of bulk traps on the performance of bulk channel charge-coupled devices
8. WFC3 detector characterization report#1: CCD44 radiation test results
9. Charge transfer efficiency in proton damage CCD's