Characterization of line-width variation on 248 and 193 nm exposure tools

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 1, 2001, Pages 259-264

  Gabor, Allen ^a   Brunner, Tim ^a   Chen, Jia ^a   Chen, Norman ^a   Deshpande, Sadanand ^a   Ferguson, Rich ^a   Horak, Dave ^a   Holmes, Steve ^a   Liebmann, Lars ^a   Mansfield, Scott ^a   Molless, Antoinette ^a   Progler, Christopher ^a   Rabidoux, Paul ^a   Ryan, Deborah ^a   Talvi, Peter ^a   Tsou, Len ^a   Vampatella, Ben ^a   Wong, Alfred ^a   Yang, Qingyun ^a   Yu, Chienfan ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; LIGHTING; LOGIC DEVICES; MICROPROCESSOR CHIPS; OPTICAL INSTRUMENT LENSES; SCANNING ELECTRON MICROSCOPY;

EXPOSURE TOOLS;

PHOTOLITHOGRAPHY;

EID: 0011247034     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435708     Document Type: Conference Paper

References (4)

1. A. Watts and J. Rankin, "Impact of gate linewidth variation on chip performance", Proceedings of ARCH Microlithography Symposium Interface 2000, (2000), 53-67.
2. A. Wong et al., "Characterization of line width variation", Proceedings of SPIE Optical Microlithography XIII 4000, I (2000), 184-191.
3. J.F Chen, K. Wampler, T.L. Laidig, "Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask", US Patent # 5821014, 10/13/1998.
4. S. Mansfield, L. Liebmann, A. Molless, and Alfred K. Wong, "Lithographic Comparison of Assist Feature Design Strategies," in Proc. SPIE (C. Progler, ed.), vol 4000, SPIE, 2000