Switching properties of V1-XTiXO2 thin films deposited from alkoxides

Materials Research Bulletin

Volumn 32, Issue 8, 1997, Pages 1109-1117

  Beteille F ^a   Morineau, R ^a   Livage, J ^a   Nagano, M ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b SAGA UNIVERSITY   (Japan)

Author keywords

A. thin films; B. Sol gel chemistry; C. X ray diffraction; D. Electrical properties; D. Optical properties

Indexed keywords

DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HEAT TREATMENT; HYSTERESIS; OPTICAL PROPERTIES; PHASE TRANSITIONS; SOL-GELS; SOLUTIONS; TITANIUM OXIDES; VANADIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

VANADIUM DIOXIDE; VANADIUM OXO ALKOXIDE;

THIN FILMS;

EID: 0031210912     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0025-5408(97)00084-6     Document Type: Article

References (26)

1. F.J. Morin, Phys. Rev. Lett. 3, 34 (1959).
2. J.B. Goodenough, J. Solid State Chem. 3, 490 (1971).
3. H. Jerominek, D. Vincent, Opt. Eng. 32, 2092 (1993).
4. K.R. Speck, H.SW. Hu, R.A. Murphy, and R.S. Potember, in Ultrastructure Processing of Advanced Materials, ed. D.R. Uhlmann and D.R. Ulrich, p. 641, Wiley (1992).
5. M. Tazawa, P. Jin, and S. Tanemura, Thin Solid Films, 281-2, p. 232 (1996).
6. G. Guzman, F. Béteille, R. Morineau, and J. Livage, J. Mater. Chem. 6, 505 (1996).
7. T. Marayama and Y. Ikuta, J. Mater. Sci. 28, 5073 (1993).
8. Y. Takahashi, M. Kanamori, H. Hashimoto, Y. Moritani, and Y. Mazuda, J. Mater. Sci. 24, 192 (1989).
9. C.B. Greenberg, Thin Solid Films 110, 73 (1983).
10. K.A. Khan and C.G. Granqvist, Appl. Phys. Lett. 55, 4 (1989).
11. E.E. Chain, J. Vac. Sc. Techn. A5, 1836 (1987).
12. A. Razavi, L. Bobya, and P. Fallon, J. Vac. Sci. Techn. A8, 1391 (1990).
13. E. Kusano and J.A. Theil, J. Vac. Sci. Techn. A7, 1314 (1989).
14. D.P. Partlow, S.R. Gurkovitch, K.C. Radford, and L.J. Denes, J. Appl. Phys. 70, 443 (1991).
15. R.S. Potember and K.R. Speck, Mat. Res. Soc. Symp. Proc. 180, 753 (1990).
16. B. Samuneva, V. Dimitrov, Y. Dimitriev, V. Chernev, and G. Gochev, J. Sol-Gel Sci.Techn. 2, 913 (1994).
17. C.N. Rao, M. Natarajan, G.V.S. Rao, and R.E. Loehman, J. Phys. Chem. Solids 32, 1147 (1971).
18. A. Mansingh, R. Singh, and M. Sayer, J. Phys. Chem. Solids 45, 79 (1984).
19. T. Goto, K. Nishimura, and S. Kabashima, J. Phys. Soc. Jpn. 28, 993 (1970).
20. T. Goto, K. Nishimura, and S. Kabashima, J. Phys. Soc. Jpn. 30, 1654 (1971).
21. S. Kabashima, T. Goto, and K. Nishimura, J. Phys. Soc. Jpn. 32, 158 (1972).
22. T. Hörlin, T. Niklewski, and M. Nygren, J. Physique 37, C4-69 (1976).
23. I. Balberg, B. Abeles, and Y. Arie, Thin Solid Films 24, 307 (1974).
24. B. Poumellec, J.F. Marucco, and B. Touzelin, Phys. Rev. B 35, 2, 2284 (1987).
25. J.B. Goodenough and H.Y.P. Hong, Phys. Rev. B 8, 1323 (1973).
26. J.P. Pouget, H. Launois, T.M. Rice, P. Dernier, A. Gossard, G. Villeneuve, and P. Hagenmuller, Phys. Rev. B 10, 1801 (1974).