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Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 237-240

SiC Synthesis by Fullerene Free Jets on Si(111) at Low Temperatures

(4) Aversa, L a Verucchi, R a Pedio, M b Iannotta, S a

a IFN CNR (Italy)

b LABORATORIO TASC (Italy)

Author keywords

Epitaxy; Film Growth; Silicon; Silicon Carbide; Supersonic Beam

Indexed keywords

CRYSTAL ORIENTATION; ELECTRONIC STRUCTURE; FULLERENES; JETS; SYNTHESIS (CHEMICAL);

FREE JETS;

SILICON CARBIDE;

EID: 18544389836 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.433-436.237 Document Type: Conference Paper

Times cited : (1)

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