Effects of hydrostatic pressure on donor states in symmetrical GaAs-Ga 0.7Al0.3As double quantum wells

Physica B: Condensed Matter

Volumn 363, Issue 1-4, 2005, Pages 262-270

  Raigoza, N ^a   Morales, A L ^a   Duque, C A ^a  

^a UNIVERSIDAD DE ANTIOQUIA   (Colombia)

Author keywords

Double quantum well; Hydrostatic pressure; Semiconductor

Indexed keywords

ABSORPTION SPECTROSCOPY; BINDING ENERGY; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; HYDROSTATIC PRESSURE; IMPURITIES; LIGHT ABSORPTION; MAGNETIC FIELD EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR MATERIALS;

DOUBLE QUANTUM WELL; ENERGY BANDGAP; EXCITONIC TRANSITIONS; HEAVY HOLES (HH);

SEMICONDUCTOR QUANTUM WELLS;

EID: 18544385779     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.03.031     Document Type: Article

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