Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressure

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 505-507

  Itskevich, I E ^a,d   Henini, M ^a   Carmona, H A ^a   Eaves, L ^a   Main, P C ^a   Maude, D K ^b,c   Portal, J C ^b,c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b GRENOBLE HIGH MAGNETIC FIELD LABORATORY   (France)

^c CNRS   (France)

^d INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMAGNETISM; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; ENERGY GAP; HIGH PRESSURE EFFECTS; HYDROSTATIC PRESSURE; MAGNETIC FIELD EFFECTS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER WAVE FUNCTION; DIAMAGNETIC SHIFT; INDIUM ARSENIDE; QUANTIZATION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030737404     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118194     Document Type: Article

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