Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 634-638

  Bradford, C ^a   O'Donnell, C B ^a   Urbaszek, B ^a   Balocchi, A ^a   Morhain, C ^a   Prior, K A ^a   Cavenett, B C ^a  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; A3. Superlattices; B1. Sulfides; B2. Semiconducting II VI materials

Indexed keywords

BINDING ENERGY; CRYSTAL ORIENTATION; LATTICE CONSTANTS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; POISSON RATIO; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; SPECTROSCOPIC ANALYSIS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

REFLECTION SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035398126     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00787-4     Document Type: Conference Paper

References (17)