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Volumn 278, Issue 1-4, 2005, Pages 699-703

Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE

(5) Onomitsu, Koji a Fukui, Hideo a Maeda, Takashi a Hirayama, Yoshiro b Horikoshi, Yoshiji a

b NTT Basic Research Laboratories (Japan)

Author keywords

A1. Doping; A3. Migration enhanced epitaxy; A3. Molecular beam epitaxy; B2. Magnetic materials; B2. Semiconducting III V materials

Indexed keywords

BERYLLIUM; FERMI LEVEL; FERROMAGNETIC MATERIALS; MAGNETIC MATERIALS; MANGANESE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SUPERCONDUCTING TRANSITION TEMPERATURE;

CURIE TEMPERATURE; DEFECT FORMATION; MIGRATION ENHANCED EPITAXY; SEMICONDUCTING MATERIALS;

SEMICONDUCTING GALLIUM;

EID: 18444411367 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.12.095 Document Type: Conference Paper

Times cited : (11)

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