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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1746-1749

Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy

(5) Onomitsu, Koji a Fukui, Hideo a Maeda, Takashi a Hirayama, Yoshiro b Horikoshi, Yoshiji a

a WASEDA UNIVERSITY (Japan)

b NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC RESISTANCE; EPITAXIAL GROWTH; OPTIMIZATION; POINT DEFECTS; SAMPLING; THERMAL EFFECTS;

BARRIER LAYERS; CODOPING; COMPLEX DEFECTS; HOLE CONCENTRATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 5044223270 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1767197 Document Type: Article

Times cited : (7)

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