Electrical properties of undoped and ion-implanted type IIa diamonds measured by photo-Hall

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 344-349

  Saguy, C ^a   Baskin, E ^a   Kalish, R ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Electrical properties; Ion implantation; n and p type doping; Native defects

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; HALL EFFECT; HOLE MOBILITY; ION IMPLANTATION; SEMICONDUCTOR DOPING;

ELECTRICAL PROPERTIES; ELECTRONIC DEVICES; N- AND P-TYPE DOPING; NATIVE DEFECTS;

DIAMONDS;

EID: 18444400860     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.12.022     Document Type: Conference Paper

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