GSMBE growth of GaInAsP/InP 1.3 μm-TM-lasers for monolithic integration with optical waveguide isolator

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 709-713

  Lelarge, F ^a   Dagens, B ^a   Cuisin, C ^a   Le Gouezigou, O ^a   Patriarche, G ^b   Van Parys, W ^c   Vanwolleghem, M ^c   Baets, R ^c   Gentner, J L ^a  

^a ALCATEL THALES III V LAB   (France)

^b CNRS Marcoussis   (France)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

A3. Gas source molecular beam epitaxy; B2. Tensile strained multiple quantum wells; B3. Optical waveguide isolator; B3. TM semiconductor amplifiers

Indexed keywords

CRYSTAL GROWTH; FERROMAGNETIC MATERIALS; LIGHT AMPLIFIERS; OPTICAL WAVEGUIDES; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

GAS SOURCE MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDE ISOLATORS; TENSILE-STRAINED MULTIPLE QUANTUM WELLS; TM SEMICONDUCTOR AMPLIFIERS;

SEMICONDUCTING GALLIUM;

EID: 18444393745     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.12.154     Document Type: Conference Paper

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