Multiwafer gas source MBE development for InGaAsP/InP laser production

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 130-134

  Lelarge, F ^a   Sanchez, J J ^a   Gaborit, F ^a   Gentner, J L ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

A1. Multiwafer growth; A3. Gas source molecular beam epitaxy; B2. Semiconducting III V materials; B3. InGaAsP InP lasers

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PUMPING (LASER); PYROMETERS; SEMICONDUCTING INDIUM COMPOUNDS;

MULTIWAFERS;

CRYSTAL GROWTH;

EID: 0037382112     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02283-2     Document Type: Conference Paper

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