Thermal annealing of a-Si:H/a-SiNx:H multilayers

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 6, 2002, Pages 783-786

  Wang, L ^a   Huang, X ^a   Ma, Z ^a   Li, Z ^b   Shi, J ^a   Zhang, L ^a   Bao, Y ^a   Wang, X ^a   Li, W ^a   Xu, J ^a   Chen, K ^a  

^a NANJING UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; HYDROGEN; INTERFACES (MATERIALS); RAMAN SCATTERING; RAPID THERMAL ANNEALING; SILICON NITRIDE; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINITY; FURNACE ANNEALING; HYDROGENATED AMORPHOUS SILICON; HYDROGENATED AMORPHOUS SILICON NITRIDE;

MULTILAYERS;

EID: 18444366185     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100955     Document Type: Article

References (18)