Compensated back-channel TFTs in hydrogenated amorphous silicon

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 25-27

  Shannon, J M ^a   Gerstner, E G ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Amorphous semiconductors; Compensation; FETs; Semiconductor device fabrication; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; ELECTRON MOBILITY; ETCHING; FIELD EFFECT TRANSISTORS; HYDROGENATION; IMPURITIES; LEAKAGE CURRENTS; OHMIC CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

CHANNEL MOBILITY; HYDROGENATED AMORPHOUS SILICON;

THIN FILM TRANSISTORS;

EID: 0037246524     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807017     Document Type: Letter

References (8)

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