Silicon nanoelectronics and beyond

Journal of Nanoparticle Research

Volumn 6, Issue 1, 2004, Pages 11-26

  Gargini, Paolo A ^a  

^a 2200 Mission College Building   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON;

ELECTRIC POTENTIAL; ELECTRICITY; ELECTRONICS; ENERGY; ILLUMINATION; INDUSTRY; NANOTECHNOLOGY; REVIEW; SEMICONDUCTOR; VACUUM; WAVEFORM;

EID: 1842809979     PISSN: 13880764     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:NANO.0000023248.65742.6c     Document Type: Review

References (10)

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2. Dennard R.H., F.H. Gaensslen, H.N. Yu, V.L. Rideout, E. Bassous & A.R. LeBlanc 1974. Design of ion-implanted MOSFETs with very small physical dimensions. IEEE J. Solid-State Circuits SC-9(5), pp. 256-257.
3. Lucovsky G., 2001. Electronic Structure of High-k Transition-metal and Rare-earth Gate Dielectrics for Aggressively-scaled Silicon Devices, International Workshop on Gate Insulator, 3.3, Tokyo.
4. Lilienfeld J.E., 1930. US Patent #1.745,175, Method and Apparatus for Controlling Electric Currents, January 28.
5. Lilienfeld J.E., 1932. US Patent #1.877,140, Amplifier for Electric Currents, September 13.
6. Lilienfeld J.E., 1933. US Patent #1,900,018 Device for Controlling Electric Current, March 7.
7. Manchanda L., B. Busch, M. Green, M. Morris, R. Dover & R. Kwo, 2001. High K Gate Dielectrics for the Silicon Industry. Microelectron. Eng. 59, 351-359.
8. Shockley W., 1956. The forty-sixth kelvin lecture 'transistor physics.' Proc. IEEE 103(Pt.B, 7), pp. 23-41.
9. Shockley W., 1984. The path to the conception of the junction transistor. IEEE Trans. Electron Dev. ED-31(11), pp. 1523-1546.
10. Zhirnov V.V., R.K. Cavin, III, J.A. Hutchby & G.I. Bourianoff, 2003. Limits to binary logic switch scaling - a Gedanken model. Proc. IEEE 91(11), pp. 1934-1939.