Key issues in fabricating microstructures with high aspect ratios by using deep X-ray lithography

Microelectronic Engineering

Volumn 71, Issue 3-4, 2004, Pages 335-342

  Cheng, Chao Min ^a,b   Chen, Ren Haw ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

DXRL; Exposure and development; High aspect ratio; LIGA; Microstructure

Indexed keywords

ASPECT RATIO; ELECTRIC CONDUCTIVITY; FABRICATION; GRAPHITE; PHOTORESISTORS; POLYMETHYL METHACRYLATES; SURFACE TENSION; SYNCHROTRON RADIATION; X RAY LITHOGRAPHY;

DEEP X-RAY LITHOGRAPHY (DXRL); DXRL; EXPOSURE AND DEVELOPMENT; HIGH ASPECT RATIO; LIGA; LITHOGRAPHIE, GALVANOFORMUNG, ABFORMUNG (LIGA);

MICROELECTRONIC PROCESSING;

EID: 1842689949     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.02.004     Document Type: Article

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