Nanoscopic study of ZnO films by electron beam induced current in the scanning tunneling microscope

Journal of Optoelectronics and Advanced Materials

Volumn 6, Issue 1, 2004, Pages 183-188

  Urbieta, A ^a   Fernandez P ^a   Piqueras, J ^a   Vasco, E ^b   Zaldo, C ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Interface states; Scanning tunneling spectroscopies; Zinc oxide

Indexed keywords

BAND STRUCTURE; ELECTRIC CONDUCTANCE; ELECTRON BEAMS; GRAIN BOUNDARIES; INTERFACES (MATERIALS); PULSED LASER DEPOSITION; SCANNING TUNNELING MICROSCOPY; ZINC OXIDE;

INTERFACE STATES; LOCAL DIFFERENTIAL CONDUCTANCE MEASUREMENTS;

SEMICONDUCTING FILMS;

EID: 1842682318     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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